Substrate response of a floating gate n-channel MOS memory cell subject to a positive linear ramp voltage

Low Voltage Floating Gate MOS Transistor Based Four-Quadrant Multiplier

This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation...

Floating-gate Mos Synapse Transistors

Voltage- and Temperature-Dependent Gate Capacitance and Current Model: Application to ZrO2 n-channel MOS Capacitor

Based on the energy-dispersion relation in each region of the gate-dielectric-silicon system, a tunneling model is developed to understand the gate current as a function of voltage and temperature. The gate capacitance is self-consistently calculated from Schrödinger and Poisson equations subject to the Fermi–Dirac statistics, using the same band structure in the silicon as used for tunneling i...

Threshold voltage shift of heteronanocrystal floating gate flash memory

Simulations of threshold voltage shift of a p-channel Ge/Si heteronanocrystal floating gate memory device were carried out using both a numerical two-dimensional Poisson–Boltzmann method and an equivalent circuit model. The results show that the presence of a Ge dot on top of a Si dot significantly prolongs the retention time of the device, indicated by the time decay behavior of the threshold ...

Threshold Voltage Shift in Hetero-nanocystal Floating Gate Flash Memory

The threshold voltage shift of a p-channel Ge/Si hetero-nanocrystal floating gate memory device was investigated both numerically and phenomenologically. The numerical investigations, by solving 2-D Poisson-Boltzmann equation, show that the presence of the Ge on Si dot tremendously prolongs the retention time, reflected by the time decay behavior of the threshold voltage shift. The increase of ...